Growth and characterization of GaN nanostructures and A1GaN/GaN heterostructures for device applications
dc.contributor.author | Agrawal, Mansi | |
dc.date.accessioned | 2025-01-08T11:52:53Z | |
dc.date.issued | 2023-07-01 | |
dc.identifier.uri | http://ir.iitd.ac.in/handle/123456789/6448 | |
dc.language.iso | en | |
dc.publisher | IIT Delhi | |
dc.subject | Sensing applications | |
dc.subject | Semiconductors | |
dc.subject | High electron mobility transistor | |
dc.subject | Molecular beam epitaxy | |
dc.subject | Raman spectroscopy | |
dc.title | Growth and characterization of GaN nanostructures and A1GaN/GaN heterostructures for device applications | |
dc.type | Thesis |